Flat-band plasmons in twisted bilayer transition metal dichalcogenides
نویسندگان
چکیده
Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate plasmons in the hole-doped twisted ${\mathrm{MoS}}_{2}$ (tb-${\mathrm{MoS}}_{2}$) by employing a full tight-binding model and random phase approximation. When considering lattice relaxations tb-${\mathrm{MoS}}_{2}$, flat band is not separated from remote valence bands, which makes contribution of interband transitions transforming plasmon dispersion energy significantly different. particular, low-damped quasiflat emerge if only consider intraband doped band, whereas $\sqrt{q}$ emerges also take into account between bands. Furthermore, energies tunable with twist angles doping levels. However, rigid sample that suffers no relaxations, lower-energy higher-energy can coexist. For tb-${\mathrm{MoS}}_{2}$ high level, strongly enhanced quench plasmons. Based on relaxation effects, conclude two conditions, isolated proper hole-doping essential for observing mode dichalcogenides. We hope our be instructive studying possibility plasmon-mediated superconductivity future.
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ژورنال
عنوان ژورنال: Physical review
سال: 2022
ISSN: ['0556-2813', '1538-4497', '1089-490X']
DOI: https://doi.org/10.1103/physrevb.105.245415